SIZ700DT datasheet(10/12 Pages) VISHAY

номер детали	SIZ700DT

подробное описание детали	N-Channel 20-V (D-S) MOSFETs Compliant to RoHS Directive 2002/95/EC

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Document Number: 69090

S09-0534-Rev. A, 06-Apr-09

Vishay Siliconix

SiZ700DT

New Product

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

15

30

45

60

0

25

50

75

100

125

150

Package Limited

TC - Case Temperature (°C)

Power, Junction-to-Case

0

8

16

24

32

40

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.00

0.44

0.88

1.32

1.76

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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