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2SD1222
2010-02-05
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1222
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
• Complementary to 2SB907.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
0.3
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
BASE
EMITTER
≈ 4.8 kΩ
≈ 300 Ω
COLLECTOR
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