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2SJ668 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SJ668 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ668 2009-07-13 1 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −60 V Drain-gate voltage (RGS = 20 kΩ) VDGR −60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −5 A Drain current Pulse(Note 1) IDP −20 A Drain power dissipation (Tc=25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 40.5 mJ Avalanche current IAR −5 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.6 MAX. 0.6 MAX. 2.3 6.8 MAX. 0.95 MAX. 0.6 ± 0.15 5.2 ± 0.2 1 2 3 2.3 1. GATE 2. DRAIN ( HEAT SINK) 3. SOURSE 3 2 1 JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) 1.1 ± 0.2 1.05 MAX. 2.3 ± 0.15 5.2 ± 0.2 0.8 MAX. 0.6 MAX. 6.5 ± 0.2 1 2 3 0.6 MAX. 0.6 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN ( HEAT SINK) 3. SOURSE 3 2 1 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.35 g (typ.) |
Аналогичный номер детали - 2SJ668_09 |
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Аналогичное описание - 2SJ668_09 |
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