2SK3090

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

2SK3090

Chopper Regulator DC−DC Converter and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

30

V

30

V

Gate−source voltage

±20

V

DC

(Note 1)

45

Drain current

Pulse (Note 1)

135

A

Drain power dissipation (Tc = 25°C)

60

W

Single pulse avalanche energy

(Note 2)

220

mJ

Avalanche current

45

A

Repetitive avalanche energy (Note 3)

6

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

2.08

°C / W

Thermal resistance, channel to ambient

83.3

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)