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LC83025 датащи(PDF) 8 Page - Sanyo Semicon Device |
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LC83025 датащи(HTML) 8 Page - Sanyo Semicon Device |
8 / 15 page Electrical Characteristics 1 at Ta = –30 to +70°C, all VDD = 4.75 to 5.25 V, all VSS = 0 V unless otherwise specified No. 4977-8/15 LC83025E Parameter Symbol Conditions min typ max Unit Note IIL1 RES, VIN = VSS (Input pins with built-in pull-up resistor) –250 –100 µA 8 Input low level current IIL2 P0 to P2, VIN = VSS –10 µA IIL3 Other input-only pins –10 µA IIH1 SELC, SAIF, SAOF, VIN = VDD 100 250 µA 8 Input high level current (Input pins with built-in pull-down resistor) IIH2 P0 to P2, VIN = VDD (n-channel transistor: off) 10 µA IIH3 Other input-only pins 10 µA Output high level voltage VOH1 IOH = –0.4 mA 4.0 4.98 V 1, 8 VOH2 IOH = –50 µA VDD – 1.2 4.997 V 2, 3, 8 Output low level voltage VOL1 IOL = 2 mA 0.065 0.4 V 1, 8 VOL2 IOL = 10 mA 0.32 1.5 V 2, 3, 8 Output off leakage current IOFF VO = VSS, VDD –40 +40 µA I/O capacitance CIO 10 pF [Audio Data Output Timing] Output data hold time tOH BCKO and ASO: shown in Figure 7. –30 ns 7 Output data delay time tOD 50 ns 7 [External DRAM Access Timing] RAS high pulse width tRP 80 ns 7 RAS low pulse width tRAS 700 ns 7 CAS high pulse width tCP 50 ns 7 CAS low pulse width tCAS 95 ns 7 CAS cycle time tPC 175 ns 7 RAS to CAS delay time tRCD 60 ns 7 CAS hold time tCSH 170 ns 7 RAS hold time tRSH Timing for output to the external DRAM. 95 ns 7 RAS address setup time tASR Shown in Figure 8. 60 ns 7 RAS address hold time tRAH 20 ns 7 CAS address setup time tASC 30 ns 7 CAS address hold time tCAH 90 ns 7 DWRT pulse width tWP 95 ns 7 Write command setup time tWCS 12 ns 7 Write command hold time tWCH 65 ns 7 Output data setup time tDSO 30 ns 7 Output data hold time tDHO 100 ns 7 Crystal oscillator C1 OSC1 and OSC2: shown in Figure 2. 13 pF 8 C2 29 pF 8 Current drain L VDD1, VDD2, VDD3; oscillator frequency: 33.8688 MHz 1.5 µH 8 IDD 60 95 mA 9 |
Аналогичный номер детали - LC83025 |
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Аналогичное описание - LC83025 |
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