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FDS3570 датащи(PDF) 4 Page - Fairchild Semiconductor

номер детали FDS3570
подробное описание детали  Power Converter Topology and MOSFET Selection for 48-V Telecom
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS3570 датащи(HTML) 4 Page - Fairchild Semiconductor

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4
Rev. A, June 2001
©2001 Fairchild Semiconductor Corporation
Figure 3. A single transistor forward converter.
Figure 4 shows a design for a typical RCD clamp circuit. The leakage inductance energy is
stored in the capacitor, and subsequently burned up in the resistor. The flyback voltage during
the primary switch's off state is not forced by the turns ratio as in the flyback design. During the
off state the forward output rectifier (D1) essentially disconnects the transformer from the
secondary circuit. The resonant effects of the transformer’s primary inductance, and the stray
capacitance at the switch’s drain node control the primary switch drain voltage. This capaci-
tance includes the FET’s output capacitance and Miller capacitance, as well as transformer
winding capacitances, and reflected secondary rectifier capacitances. Again, the severe
nonlinearity of many of these elements leads one to a largely empirical approach to circuit
optimization. In general, it is safe to assume that the maximum drain-voltage observed in the
off state will be 2.5- to 3-times the input voltage. Therefore, the 200-V FDS2670 is the best
choice for these designs. Figure 5 shows the important current and voltage waveforms.
Figure 4. A typical RCD clamp circuit.
Gate
Q1
MOSFET N
D1
D2
T1
C1
+
U1
PWM
GND
VIN
RTN
C2
L1
+
VOUT
R1
To FET Drain
To Ground of VIN
D1
C1


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