поискавой системы для электроныых деталей |
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FDS3570 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS3570 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 12 page 4 Rev. A, June 2001 ©2001 Fairchild Semiconductor Corporation Figure 3. A single transistor forward converter. Figure 4 shows a design for a typical RCD clamp circuit. The leakage inductance energy is stored in the capacitor, and subsequently burned up in the resistor. The flyback voltage during the primary switch's off state is not forced by the turns ratio as in the flyback design. During the off state the forward output rectifier (D1) essentially disconnects the transformer from the secondary circuit. The resonant effects of the transformer’s primary inductance, and the stray capacitance at the switch’s drain node control the primary switch drain voltage. This capaci- tance includes the FET’s output capacitance and Miller capacitance, as well as transformer winding capacitances, and reflected secondary rectifier capacitances. Again, the severe nonlinearity of many of these elements leads one to a largely empirical approach to circuit optimization. In general, it is safe to assume that the maximum drain-voltage observed in the off state will be 2.5- to 3-times the input voltage. Therefore, the 200-V FDS2670 is the best choice for these designs. Figure 5 shows the important current and voltage waveforms. Figure 4. A typical RCD clamp circuit. Gate Q1 MOSFET N D1 D2 T1 C1 + U1 PWM GND VIN RTN C2 L1 + VOUT R1 To FET Drain To Ground of VIN D1 C1 |
Аналогичный номер детали - FDS3570 |
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Аналогичное описание - FDS3570 |
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