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FDS2570 датащи(PDF) 6 Page - Fairchild Semiconductor |
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FDS2570 датащи(HTML) 6 Page - Fairchild Semiconductor |
6 / 12 page 6 Rev. A, June 2001 ©2001 Fairchild Semiconductor Corporation becomes a current source that forward biases diodes D1 and D2, returning the energy stored in the transformer’s primary to the input capacitor. No snubbers or clamps are required, and the maximum off voltage the primary side FET will see is the input voltage, plus a couple of diode drops. Therefore, the 80V FDS3570 is useful in designs that will never have the input exceed of 76V. The 100V FDS3670 will provide a little more design margin if desired. All wave- forms are essentially similar to Figure 5 except the FET’s drain voltages, which are shown in Figure 7. Figure 6. Two transistor forward converter. Figure 7. Voltage and current waveforms for two transistor forward converter. Note that the primary current is the same as the single transistor design example above. However, the FDS3570 has an on-resistance of only 15% than that of the 200V FDS2670 (20m Ω vs. 130 mΩ). Even with two transistors in series, the net on-resistance is still much lower than the single high-voltage transistor, so a higher power level can be obtained. Efficiency will also be several percentage points higher than the single transistor design since the energy that would be dissipated in snubbers and clamps is, in this case, recovered to the input capacitor. Using the FDS3670’s maximum RMS current rating of 9 amps, an assumed efficiency of 83% with 36V in, and a maximum 45% duty factor, gives a maximum output power of 180 watts. Again, it is permissible to parallel FETs in an effort to lower the conduction losses and raise the useable output power of the converter. D1 D2 T1 D3 D4 Q1 Q2 Isolation Input Gate GND U1 PWM Gate Source GND RTN C2 L1 + C1 + VOUT VIN VGS(Q1TQ2) -VIN -Can Vary From 0 to VIN VSD(Q1TQ2) |
Аналогичный номер детали - FDS2570 |
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Аналогичное описание - FDS2570 |
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