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FDS2670 датащи(PDF) 8 Page - Fairchild Semiconductor

номер детали FDS2670
подробное описание детали  Power Converter Topology and MOSFET Selection for 48-V Telecom
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS2670 датащи(HTML) 8 Page - Fairchild Semiconductor

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8
Rev. A, June 2001
©2001 Fairchild Semiconductor Corporation
Figure 9. Voltage and current waveforms for the basic push-pull design.
Full-Bridge Designs
Full-bridge designs, sometimes called four transistor bridges, are generally used at very high
power levels, mainly due to the cost of these designs. Two of the four switches have floating
sources, so they each require an isolated gate drive, usually transformer coupled. The power
transformers primary winding design is a simple single winding. The secondary, is generally
center-tapped, at least for very low output voltage designs. The main advantage of the bridge
topology is that the drain voltages of all four switches are constrained to Vin. Energy in the
transformer’s leakage inductance gets returned to the input and can help force commutate the
switches. The switches get turned on across a diagonal of the bridge. Figure 10 shows the
basic circuit design, and Figure 11 shows the idealized waveforms. Since the drain voltage is
well clamped to Vin without snubbers, there is no concern for passive energy losses. This also
allows the use of the 80V, FDS3570 in all four locations. With these devices, output power
VGS(Q2)
VGS(Q1)
PWM'ED EDGE
-2VIN
-VIN
VDS(Q1)
VDS(Q2)
D1(ANODE)
D2(ANODE)
IL1
I0
VSW
VSAT
IPK
0
TIME
SW2
SW1
2VIN
VIN
IPRI
0
TIME
IMIN


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