BC857A datasheet(2/3 Pages) SECOS

номер детали	BC857A

подробное описание детали	BC856A

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Any changing of specification will not be informed individual

BC856A, B

BC857A, B, C

BC858A, B, C

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Typical Characteristics

BC857, BC858

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base-Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

0

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02

−1.0

−10

0

−20

−0.1

−0.4

−0.8

1.5

1.0

0.7

0.5

0.3

−0.2

−10

−100

−1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE = −10 V

TA = 25°C

−55°C to +125°C

IC = −100 mA

IC = −20 mA

−0.5 −1.0 −2.0

−5.0 −10

−20

−50 −100 −200

−0.1 −0.2

−0.5 −1.0 −2.0

−5.0

−10 −20

−50 −100

IC = −200 mA

IC = −50 mA

IC =

−10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current-Gain - Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

−0.4

1.0

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

−0.5

TA = 25°C

Cob

Cib

−0.6

−1.0

−2.0

−4.0 −6.0

−10

−20 −30 −40

150

−1.0

−2.0 −3.0

−5.0

−10

−20 −30

−50

VCE = −10 V

TA = 25°C

1.0

01-Jun-200

4 Rev. B

Page 2 of 3

Аналогичный номер детали - BC857A

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BC857A	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
GUANGDONG HOTTECH INDUS...	BC857A	498Kb / 3P	Plastic-Encapsulate Transistors
Weitron Technology	BC857A	95Kb / 4P	General Purpose Transistor PNP Silicon
Shanghai Leiditech Elec...	BC857A	679Kb / 4P	Low current.(max.100mA)
Diodes Incorporated	BC857A	119Kb / 4P	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR DS11207 Rev. 19 - 2

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