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2SK3517-01 датащи(PDF) 1 Page - Fuji Electric

номер детали 2SK3517-01
подробное описание детали  N-CHANNEL SILICON POWER MOSFET
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производитель  FUJI [Fuji Electric]
домашняя страница  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3517-01 датащи(HTML) 1 Page - Fuji Electric

  2SK3517-01 Datasheet HTML 1Page - Fuji Electric 2SK3517-01 Datasheet HTML 2Page - Fuji Electric 2SK3517-01 Datasheet HTML 3Page - Fuji Electric 2SK3517-01 Datasheet HTML 4Page - Fuji Electric  
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1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500
Continuous drain current
ID
±6
Pulsed drain current
ID(puls]
±24
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
6
Maximum Avalanche Energy
EAS
*1
115
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
2.02
Tc=25°C
90
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3517-01
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=3A
VGS=10V
ID=3A
VDS=25V
VCC=300V ID=3A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
nA
S
pF
nC
A
V
µs
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.39
62.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=6A
VGS=10V
L=5.9mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0
5.0
25
250
10
100
1.15
1.50
2.5
5
430
675
60
90
2.5
4.5
10
15
5
7.5
20
30
5
7.5
15
22.5
6.5
10.5
2.5
4.5
6
1.00
1.50
0.5
1.7
-55 to +150
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*4 VDS 500V
<
=
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph
*2 Tch 150°C
=
<


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