поискавой системы для электроныых деталей |
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2SK3527-01 датащи(PDF) 1 Page - Fuji Electric |
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2SK3527-01 датащи(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 Item Symbol Ratings Unit Drain-source voltage VDS 600 VDSX *5 600 Continuous drain current ID ±21 Pulsed drain current ID(puls] ±84 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 21 Maximum Avalanche Energy EAS *1 333.8 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 2.50 Tc=25°C 335 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3527-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V ID=8.5A VGS=10V ID=8.5A VDS=25V VCC=300V ID=8.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.373 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=300V ID=17A VGS=10V L=1.4mH Tch=25°C IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W °C °C 600 3.0 5.0 25 250 10 100 0.29 0.37 10 20 2280 3420 290 435 16 24 26 39 37 56 78 117 13 19 54 81 15 23 20 30 21 0.93 1.50 0.7 10.0 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < 200304 *1 L=1.4mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch 150°C = < *4 VDS 600V *5 VGS=-30V < = 11.6±0.2 |
Аналогичный номер детали - 2SK3527-01 |
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Аналогичное описание - 2SK3527-01 |
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