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2SK3606-01 датащи(PDF) 1 Page - Fuji Electric |
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2SK3606-01 датащи(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 Item Symbol Ratings Unit Drain-source voltage VDS 200 VDSX *5 170 Continuous drain current ID ±18 Pulsed drain current ID(puls] ±72 Gate-source voltage VGS ±30 Non-repetitive Avalanche current IAS *2 18 Maximum Avalanche Energy EAS *1 125.5 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 2.02 Tc=25°C 105 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3606-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V ID=6.5A VGS=10V ID=6.5A VDS=25V VCC=48V ID=6.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA m Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.191 62.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=100V ID=13A VGS=10V L=620µH Tch=25°C IF=13A VGS=0V Tch=25°C IF=13A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W °C °C 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 110 165 5 7.5 12 18 2.6 3.9 22 33 6.1 9.2 21 31.5 812 5 7.5 18 1.10 1.65 0.15 0.88 -55 to +150 Outline Drawings (mm) TO-220AB Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < *4 VDS 200V < = www.fujielectric.co.jp/denshi/scd *5 VGS=-30V 200304 *1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C = < |
Аналогичный номер детали - 2SK3606-01 |
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Аналогичное описание - 2SK3606-01 |
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