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KF3N50IZ датащи(PDF) 2 Page - KEC(Korea Electronics)

номер детали KF3N50IZ
подробное описание детали  N CHANNEL MOS FIELD EFFECT TRANSISTOR
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производитель  KEC [KEC(Korea Electronics)]
домашняя страница  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KF3N50IZ датащи(HTML) 2 Page - KEC(Korea Electronics)

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2011. 5. 23
2/6
KF3N50DZ/IZ
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25
℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, IS=3A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤3A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
2
PRODUCT NAME
LOT NO
1
001
2
KF3N50
DZ
1
001
2
KF3N50
IZ
1
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250㎂ , VGS=0V
500
-
-
V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
-
0.55
-
V/
Drain Cut-off Current
IDSS
VDS=500V, VGS=0V,
-
-
10
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
2.5
-
4.5
V
Gate Leakage Current
IGSS
VGS=±25V, VDS=0V
-
-
±10
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=1.25A
-
2.0
2.5
Dynamic
Total Gate Charge
Qg
VDS=400V, ID=3A
VGS=10V
(Note4,5)
-
8.0
-
nC
Gate-Source Charge
Qgs
-
2.0
-
Gate-Drain Charge
Qgd
-
3.5
-
Turn-on Delay time
td(on)
VDD=250V
ID=3A
RG=25Ω
(Note4,5)
-
15
-
ns
Turn-on Rise time
tr
-
20
-
Turn-off Delay time
td(off)
-
25
-
Turn-off Fall time
tf
-
20
-
Input Capacitance
Ciss
VDS=25V, VGS=0V, f=1.0MHz
-
350
-
pF
Output Capacitance
Coss
-
45
-
Reverse Transfer Capacitance
Crss
-
4.5
-
Source-Drain Diode Ratings
Continuous Source Current
IS
VGS<Vth
-
-
3
A
Pulsed Source Current
ISP
-
-
12
Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=3A, VGS=0V,
dIs/dt=100A/
-
300
-
ns
Reverse Recovery Charge
Qrr
-
1.1
-
μC


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