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KSD-T5C024-000
1
BC808
PNP Silicon Transistor
PIN Connection
SOT-23
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and
low power output stages
• Complementary pair with BC818
Ordering Information
Type NO.
Marking
Package Code
BC808
MA □ □
①
②
③
SOT-23
①
Device Code ② hFE Rank ③ Year&Week Code
Absolute maximum ratings
(Ta=25
°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-30
V
Collector-Emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-800
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
Electrical Characteristics
(Ta=25
°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-25
-
-
V
Base-Emitter Turn On voltage
VBE(ON)
VCE=-1V, IC=-300mA
-
-
-1.2
V
Collector-Emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-
-
-700
mV
Collector cut-off current
ICBO
VCB=-25V, IE=0
-
-
-100
nA
DC current gain
hFE
*
VCE=-1V, IC=-100mA
100
-
630
-
Transition frequency
fT
VCB=-5V, IE=10mA,
f=100MHz
-
100
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
16
-
pF
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
B
E
C
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