KSD-T5C045-002

2

STJ004SF

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

-30

-

-

V

Gate threshold voltage

-0.7

-

-1.4

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

④

-

61

91

m

-

86

129

Forward transfer conductance

④

-

13.2

-

S

Input capacitance

Ciss

f=1MHz

-

398

-

pF

Output capacitance

Coss

-

82

-

Reverse transfer capacitance

Crss

-

46

-

Turn-on delay time

③④

-

11

-

ns

Rise time

-

5.3

-

Turn-off delay time

-

7.6

-

Fall time

-

5.3

-

Total gate charge

②④

-

6.4

9.6

nC

Gate-source charge

-

2.8

4.2

Gate-drain charge

-

1.7

2.6

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Continuous source current

Integral reverse diode

in the MOSFET

-

-

-0.5

A

Source current (Pulsed)

①

-

-

-2.0

Forward voltage

④

-

-0.7

-1.2

V

Reverse recovery time

-

29

-

ns

Reverse recovery charge

-

130

-

uC

Note ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature