BD243C datasheet(3/6 Pages) ONSEMI

номер детали	BD243C

подробное описание детали	Complementary Silicon Plastic Power Transistors

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BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)

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3

Figure 2. Switching Time Test Circuit

2.0

0.06

Figure 3. Turn-On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.1

0.07

0.02

0.1

0.2

0.4

0.6

2.0

6.0

td @ VBE(off) = 5.0 V

TJ = 25°C

VCC = 30 V

IC/IB = 10

+ 11 V

0

VCC

- 30 V

SCOPE

RB

- 4 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

RC

tr

0.03

0.05

1.0

4.0

D1 MUST BE FAST RECOVERY TYPE eg.

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25

ms

- 9.0 V

D1

51

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.2

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1000

500

RqJC(max) = 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03

0.3

3.0

30

300

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25°C

CURVES APPLY BELOW RATED VCEO

10

5.0

Figure 5. Active Region Safe Operating Area

5.0

1.0

0.1

10

20

60

100

TJ = 150°C

BD243B, BD244B

BD243C, BD244C

5.0 ms

0.5 ms

0.2

2.0

0.5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0

0.3

40

80

1.0

ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC - VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150°C: TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C, TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

Аналогичный номер детали - BD243C

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	BD243C	127Kb / 3P	POWER TRANSISTORS(6A,65W)
Rectron Semiconductor	BD243C	76Kb / 3P	TO-220 - Power Transistors and Darlingtons
Motorola, Inc	BD243C	140Kb / 6P	Complementary Silicon Plastic Power Transistors
ON Semiconductor	BD243C	147Kb / 6P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 13
ON Semiconductor	BD243C	140Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 7

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Аналогичное описание - BD243C

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BD243B	140Kb / 6P	Complementary Silicon Plastic Power Transistors
Motorola, Inc	BD787	148Kb / 6P	Complementary Plastic Silicon Power Transistors
New Jersey Semi-Conduct...	2N6107	297Kb / 3P	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
ON Semiconductor	2N6109G	117Kb / 5P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 9
	TIP29	143Kb / 5P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 11
	2N6487	104Kb / 6P	Complementary Silicon Plastic Power Transistors November, 2014 ??Rev. 16
	MJD253-001	168Kb / 8P	Complementary Silicon Plastic Power Transistors August, 2013 ??Rev. 15
New Jersey Semi-Conduct...	MJE15032	133Kb / 2P	Complementary Silicon Plastic Power Transistors
ON Semiconductor	BD243B	103Kb / 6P	Complementary Silicon Plastic Power Transistors November, 2014 ??Rev. 15
	MJE200G	170Kb / 6P	Complementary Silicon Power Plastic Transistors December, 2013 ??Rev. 15
	MJB6488	68Kb / 6P	Complementary Silicon Plastic Power Transistors July, 2004 ??Rev. P0

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