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BCX17 датащи(PDF) 1 Page - Rohm |
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BCX17 датащи(HTML) 1 Page - Rohm |
1 / 2 page BCX19 Transistors 1/1 Each lead has same dimensions (1)Emitter (2)Base (3)Collector BCX19 0.45 0.95 0.15 2.9 0.95 (1) (3) 0.95 (2) 1.9 0.4 Abbreviated symbol : GU1 NPN small signal transistor BCX19 Features Dimensions (Unit : mm) 1) High gain and low saturation voltage. 2) Complements the BCX17. Packaging specifications Package Code Taping Basic ordering unit (pieces) BCX17 T116 3000 Type Absolute maximum ratings (Ta=25 °C) Collector-emitter voltage (VBE=0) Collector-emitter voltage (open base) Emitter-base voltage Collector current Collector current (peak value) Collector power dissipation Junction temperature Storage temperature ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE ∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE Parameter VCES VCEO VEBO PC Tj Tstg 50 V V V A °C °C 45 5 0.5 IC ICM A 1 ∗ 0.2 0.35 W W 150 −65 to 150 Symbol Limits Unit ∗2 0.425 W Electrical characteristics (Ta=25 °C) Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current Emitter-base cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current transfer ratio Collector-base cutoff current Parameter Symbol BVCES BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT ICBO Min. 50 45 5 − − − 100 − − − − − − − − 250 − − − − − 0.1 10 0.62 600 70 −− − 5 VIC = 50 µA IC = 10mA IE = 50 µA VCB = 20V VEB = 5V IC/IB = 500mA/ 50mA VCE = 1V, IC= 100mA VCE = 1V, IC= 300mA VCE = 5V, IE= 20mA, f=100MHz VCB = 20V, Ta=150 °C V V µA µA V − MHz µA Typ. Max. Unit Conditions VBE(on) − − 1.2 VCE = 1V, IC= 500mA V 40 −− VCE = 1V, IC= 500mA Transition frequency |
Аналогичный номер детали - BCX17 |
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Аналогичное описание - BCX17 |
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