2N2369A datasheet(2/2 Pages) SEME-LAB

номер детали	2N2369A

подробное описание детали	HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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производитель	SEME-LAB [Seme LAB]

домашняя страница	http://www.semelab.co.uk

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2N2369A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Document Number 5277

Issue 2

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and

reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that

datasheets are current before placing orders.

Test Conditions

Min.

Typ.

Max.

IC = 10mA

IC = 10μA

IE = 10μA

VCE = 20V

VCB = 20V

TA = +150°C

IC = 10mA

IB = 1mA

TA = +125°C

IC = 30mA

IB = 3mA

IC = 100mA

IB = 10mA

IC = 10mA

IB = 1mA

IC = 30mA

IB = 3mA

IC = 100mA

IB = 10mA

IC = 10mA

IB = 1mA

TA = -55°C to +125°C

IC = 10mA

VCE = 0.35V

IC = 10mA

VCE = 1V

IC = 30mA

VCE = 0.40V

IC = 100mA

VCE = 1V

IC = 10mA

VCE = 0.35V

TA = –55°C

IC = 10mA

VCE = 10V

f = 100MHz

IE = 0

VCB = 5V

f = 1MHz

IC = 10mA

VCC = 10V

IB1 = –IB2 = 10mA

IC = 10mA

VCC = 3V

IB1 = 3mA

IB2 = –1.5mA

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

V(BR)CEO*

Collector – Emitter Breakdown Voltage

V(BR)CBO

Collector – Base Breakdown Voltage

V(BR)EBO

Emitter – Base Breakdown Voltage

ICES

Collector – Emitter Cut-off Current

ICBO

Collector – Base Cut-off Current

VCE(sat)*

Collector – Emitter Saturation Voltage

VBE(sat)*

Base – Emitter Saturation Voltage

hFE*

DC Current Gain

fT

Transition Frequency

Ccbo

Output Capacitance

ts

Storage Time

ton

Turn–On Time

toff

Turn–Off Time

15

40

4.5

0.40

30

0.20

0.30

0.25

0.5

0.70

0.8

0.85

0.9

1.15

1.1

1.6

0.59

1.02

40

120

40

120

30

71

20

50

500

675

2.3

4

613

912

13

18

V

μA

V

—

MHz

pF

ns

* Pulse Test: tp ≤ 300μs, δ≤ 2%.

Parameter

Unit

Аналогичный номер детали - 2N2369A

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	2N2369A	95Kb / 6P	HIGH-SPEED SATURATED SWITCH November 1988
Microsemi Corporation	2N2369A	54Kb / 2P	NPN SILICON TRANSISTOR
Semicoa Semiconductor	2N2369A	30Kb / 1P	Chip Type 2C2369A Geometry 0005 Polarity NPN
Microsemi Corporation	2N2369A	442Kb / 8P	TECHNICAL DATA SHEET
Boca Semiconductor Corp...	2N2369A	44Kb / 2P	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

More results

Аналогичное описание - 2N2369A

производитель	номер детали	датащи	подробное описание детали
Seme LAB	2N2369ACSM	21Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2369A1	22Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2222ACSM4	15Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2222ACSM	17Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2369ACSM	15Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2222ADCSM	18Kb / 2P	DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2907ACSM	16Kb / 2P	HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2907ADCSM	41Kb / 2P	DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N2484CSM	20Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
	2N930CSM	20Kb / 2P	HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

More results

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