поискавой системы для электроныых деталей |
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1N1183 датащи(PDF) 1 Page - Diotec Semiconductor |
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1N1183 датащи(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Dimensions - Maße [mm] Nominal Current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 ... 1000 V Metal case Metallgehäuse DO-5 Weight approx. Gewicht ca. 6 g Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R) Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type Typ Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1N1183 = PBY301 50 60 1N1184 = PBY302 100 120 1N1186 = PBY303 200 240 1N1188 = PBY304 400 480 1N1190 = PBY305 600 720 1N3766 = PBY306 800 1000 1N3768 = PBY307 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 35 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 110 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 450/500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1000 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -65...+175°C -65...+175°C 1 Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 4+0.5 M6 SW17 Type 13.6 |
Аналогичный номер детали - 1N1183 |
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Аналогичное описание - 1N1183 |
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