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FM24V10-G датащи(PDF) 1 Page - Ramtron International Corporation |
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FM24V10-G датащи(HTML) 1 Page - Ramtron International Corporation |
1 / 16 page Pre-Production This is a product in the pre-production phase of development. Device Ramtron International Corporation characterization is complete and Ramtron does not expect to change the 1850 Ramtron Drive, Colorado Springs, CO 80921 specifications. Ramtron will issue a Product Change Notice if any (800) 545-FRAM, (719) 481-7000 specification changes are made. http://www.ramtron.com Rev. 2.0 May 2010 Page 1 of 16 FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion (1014) Read/Writes • 10 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 3.4 MHz maximum bus frequency • Direct hardware replacement for EEPROM • Supports legacy timing for 100 kHz & 400 kHz Device ID and Serial Number • Device ID reads out Manufacturer ID & Part ID • Unique Serial Number (FM24VN10) Low Voltage, Low Power Operation • Low Voltage Operation 2.0V – 3.6V • Active Current < 150 µA (typ. @ 100KHz) • 90 µA Standby Current (typ.) • 5 µA Sleep Mode Current (typ.) Industry Standard Configuration • Industrial Temperature -40 ° C to +85° C • 8-pin “Green”/RoHS SOIC Package Description The FM24V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24V10 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24V10 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24V10 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The devices are available in industry standard 8-pin SOIC package using a familiar two-wire (I2C) protocol. The FM24VN10 is offered with a unique serial number that is read-only and can be used to identify a board or system. Both devices incorporate a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The devices are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration NC A1 A2 VSS VDD WP SCL SDA 1 2 3 4 8 7 6 5 Pin Name Function A1, A2 Device Select Address SDA Serial Data/address SCL Serial Clock WP Write Protect VDD Supply Voltage VSS Ground |
Аналогичный номер детали - FM24V10-G |
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Аналогичное описание - FM24V10-G |
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