FC40SA50FK datasheet(2/10 Pages) VISHAY

номер детали	FC40SA50FK

подробное описание детали	Power MOSFET, 40 A

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Document Number: 94542

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 12-May-10

FC40SA50FKP

Vishay Semiconductors

Power MOSFET, 40 A

Note

(1) Pulse width

≤ 300 μs; duty cycle ≤ 2 %

Notes

(1) Pulse width

≤ 300 μs; duty cycle ≤ 2 %

(2) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDSS

THERMAL RESISTANCE

PARAMETER

SYMBOL

TYP.

MAX.

UNITS

Junction to case

RthJC

-0.29

°C/W

Case to sink, flat, greased surface

RthCS

0.05

-

STATIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Drain to source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 250 μA

500

-

V

Breakdown voltage temperature coefficient

ΔV(BR)DSS/ΔTJ

Reference to 25 °C, ID = 1 mA

-

0.60

-

V/°C

Static drain to source on-resistance

RDS(on) (1)

VGS = 10 V, ID = 24 A

-

0.084

0.10

Ω

Gate threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

3.0

-

5.0

V

Drain to source leakage current

IDSS

VDS = 500 V, VGS = 0 V

VDS = 400 V, VGS = 0 V, TJ = 125 °C

--

50

μA

-

250

Gate to source forward leakage

IGSS

VGS = 30 V

-

250

nA

Gate to source reverse leakage

VGS = - 30 V

-

- 250

DYNAMIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Forward transconductance

gfs

VDS = 50 V, ID = 28 A

23

-

S

Total gate charge

Qg (1)

ID = 40 A

VDS = 400 V

VGS = 10 V; see fig. 6 and 13

-

270

nC

Gate to source charge

Qgs (1)

--

84

Gate to drain ("Miller") charge

Qgd (1)

-

130

Turn-on delay time

td(on) (1)

VDD = 250 V

ID = 40 A

Rg = 1.0

Ω

VGS = 10 V, see fig. 10

-25-

ns

Rise time

tr (1)

-140

-

Turn-off delay time

td(off) (1)

-55-

Fall time

tf (1)

-74-

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V

f = 1.0 MHz, see fig. 5

-

8310

-

pF

Output capacitance

Coss

-960

-

Reverse transfer capacitance

Crss

-120

-

Output capacitance

Coss

VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz

-

10 170

-

VGS = 0 V, VDS = 480 V, f = 1.0 MHz

-

240

-

Effective output capacitance

Coss eff. (2)

VGS = 0 V, VDS = 0 V to 480 V

-

440

-

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