поискавой системы для электроныых деталей |
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4N33 датащи(PDF) 1 Page - Siemens Semiconductor Group |
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4N33 датащи(HTML) 1 Page - Siemens Semiconductor Group |
1 / 2 page 5–1 FEATURES • Very High Current Transfer Ratio, 500% Min. • High Isolation Resistance, 1011 Ω Typical • Standard Plastic DIP Package • Underwriters Lab File #E52744 • VDE Approvals #0884 (Available with Option 1) DESCRIPTION The 4N32 and 4N33 are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isola- tion between driving and load circuits. These opto- couplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Maximum Ratings Emitter Peak Reverse Voltage ........................................3 V Continuous Forward Current .........................60 mA Power Dissipation at 25 °C..........................100 mW Derate Linearly from 55 °C....................1.33 mW/°C Detector Collector-Emitter Breakdown Voltage, BVCEO .......................................................... 30 V Emitter-Base Breakdown Voltage, BVEBO ............................................................. 8V Collector-Base Breakdown Voltage, BVCBO .......................................................... 50 V Emiter-Collector Breakdown Voltage, BVECO ............................................................ 5 V Collector (load) Current...............................125 mA Power Dissipation at 25 °C Ambient ...........150 mW Derate Linearly from 25 °C......................2.0 mW/°C Package Total Dissipation at 25 °C Ambient .............250 mW Derate Linearly from 25 °C......................3.3 mW/°C Isolation Test Voltage......................... 5300 VACRMS Between Emitter and Detector, Standard Climate: 23 °C/50%RH, DIN 50014 Leakage Path ........................................ 7 mm min. Air Path................................................... 7 mm min. Isolation Resitance VIO=500 V/25°C ...................................... ≥10 12 Ω VIO=500 V/100°C .................................... ≥10 11 Ω Storage Temperature ...................–55 °C to +150°C Operating Temperature ...............–55 °C to +100°C Lead Soldering Time at 260 °C .................... 10 sec. V DE Electrical Characteristics (TA=25°C) *Indicates JEDEC registered values Parameter Min. Typ. Max. Unit Condition Emitter Forward Voltage 1.25 1.5 V IF=50 mA Reverse Current 0.1 100 µAV R=3.0 V Capacitance 25 pF VR=0 V Detector BVCEO*30 V IC=100 µA, IF=0 BVCBO*50 V IC=100 µA, IF=0 BVEBO*8 V IC=100 µA, IF=0 BVECO*5 10 V IE=100 µA, IF=0 ICEO 1.0 100 nA VCE=10 V, IF=0 HFE 13K IC=0.5 mA Package Current Transfer Ratio 500 % IF=10 mA, VCE=10 V VCEsat 1.0 V IC=2 mA, IF=8 mA Coupling Capacitance 1.5 pF Turn On Time 5 µsV CC=10 V, IC=50 mA Turn Off Time 100 µsI F=200mA, RL=180 Ω Dimensions in inches (mm) 1 2 3 6 5 4 Base Collector Emitter Anode Cathode NC .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID. 6 5 4 1 2 3 18 ° typ. .300 (7.62) .347 (8.82) 4 ° typ. 4N32/4N33 PHOTODARLINGTON OPTOCOUPLER |
Аналогичный номер детали - 4N33 |
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Аналогичное описание - 4N33 |
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