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GI810 датащит (Datasheet) 1 Page - Vishay Siliconix

№ деталь GI810
подробность  Glass Passivated Junction Fast Switching Rectifier
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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Document Number: 88628
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Junction Fast Switching Rectifier
GI810 thru GI818
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For general purpose of medium frequency rectification.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
trr
750 ns
IR
10 μA
VF
1.2 V
TJ max.
175 °C
DO-204AC (DO-15)
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI810
GI811
GI812
GI814
GI816
GI817
GI818
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA= 75 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
GI810
GI811
GI812
GI814
GI816
GI817
GI818
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.2
V
Maximum DC reverse current at
rated DC blocking voltage
TA= 25 °C
IR
10
μA
TA= 100 °C
100
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs
trr
750
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
25
pF




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