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SI1032R-T1-GE3 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI1032R-T1-GE3
подробное описание детали  N-Channel 1.5 V (G-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
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Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
Vishay Siliconix
Si1032R/X
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.40
0.7
1.2
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 2.8 V
± 0.5
± 1.0
µA
VDS = 0 V, VGS = ± 4.5 V
± 1.0
± 3.0
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
250
mA
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 200 mA
5
VGS = 2.5 V, ID = 175 mA
7
VGS = 1.8 V, ID = 150 mA
9
VGS = 1.5 V, ID = 40 mA
10
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
0.5
S
Diode Forward Voltagea
VSD
IS = 150 mA, VGS = 0 V
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
750
pC
Gate-Source Charge
Qgs
75
Gate-Drain Charge
Qgd
225
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 47 
ID  200 mA, VGEN = 4.5 V, Rg = 10 
50
ns
Rise Time
tr
25
Turn-Off Delay Time
td(off)
50
Fall Time
tf
25
Output Characteristics
0.0
0.1
0.2
0.3
0.4
0.5
0123456
VDS - Drain-to-Source Voltage (V)
VGS = 5 V thru 1.8 V
1 V
Transfer Characteristics
0
100
200
300
400
500
600
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
TJ = - 55 °C
125 °C
25 °C


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