SI4114DY datasheet(1/10 Pages) VISHAY

номер детали	SI4114DY

подробное описание детали	N-Channel 20-V (D-S) MOSFET

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Vishay Siliconix

Si4114DY

New Product

Document Number: 68394

S09-0764-Rev. B, 04-May-09

www.vishay.com

1

N-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Low-Side MOSFET for Synchronous Buck

- Game Machine

- PC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

20

0.006 at VGS = 10 V

20e

27.5 nC

0.007 at VGS = 4.5 V

20e

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4114DY

-T1-E3 (Lead (Pb)-free)

Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

e. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

20e

A

TC = 70 °C

18.2

TA = 25 °C

15.2b, c

TA = 70 °C

12.1b, c

Pulsed Drain Current

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

5.1

TA = 25 °C

2.2b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

30

Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5.7

W

TC = 70 °C

3.6

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

39

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

18

22

Аналогичный номер детали - SI4114DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4114DY	141Kb / 7P	N-Channel 20-V (D-S) MOSFET Rev. A, 05-May-08
Vishay Telefunken	SI4114DY	245Kb / 10P	N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI4114DY-T1-E3	198Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI4114DY-T1-GE3	198Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI4114DY	198Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022

More results

Аналогичное описание - SI4114DY

производитель	номер детали	датащи	подробное описание детали
DinTek Semiconductor Co...	DTS2300S	327Kb / 7P	N-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI4158DY	188Kb / 9P	N-Channel 20-V (D-S) MOSFET Rev. A, 17-Nov-08
Analog Power	AM7320N	79Kb / 3P	N-Channel 20-V (D-S) MOSFET
	AM2312N	317Kb / 5P	N-Channel 20-V (D-S) MOSFET
	AM7422NA	348Kb / 5P	N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI2374DS	258Kb / 10P	N-Channel 20 V (D-S) MOSFET Rev. A, 14-Apr-14
	SI8406DB	151Kb / 10P	N-Channel 20 V (D-S) MOSFET Rev. A, 30-Apr-12
	SI1056X	123Kb / 8P	N-Channel 20 V (D-S) MOSFET Rev. D, 08-Nov-10
	TN0201K	202Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI4426DY	65Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. B, 15-May-00
	SI1410EDH	49Kb / 5P	N-Channel 20-V (D-S) MOSFET Rev. D, 31-Oct-05

More results

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