поискавой системы для электроныых деталей |
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SI4210DY-T1-GE3 датащи(PDF) 5 Page - Vishay Siliconix |
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SI4210DY-T1-GE3 датащи(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 65151 S09-1821-Rev. A, 14-Sep-09 www.vishay.com 5 Vishay Siliconix Si4210DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 1.5 3.0 4.5 6.0 7.5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Foot 0.0 0.7 1.4 2.1 2.8 3.5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA -Ambient Temperature (°C) |
Аналогичный номер детали - SI4210DY-T1-GE3 |
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Аналогичное описание - SI4210DY-T1-GE3 |
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