Document Number: 67520

www.vishay.com

S11-0400-Rev. A, 14-Mar-11

1

This datasheet is subject to change without notice.

P-Channel 1.8 V (G-S) MOSFET

SPICE Device Model Si4403CDY

Vishay Siliconix

DESCRIPTION

The attached SPICE model describes the typical electrical

characteristics of the p-channel vertical DMOS. The

subcircuit model is extracted and optimized over the - 55 °C

to + 125 °C temperature ranges under the pulsed 0 V to 5 V

gate drive. The saturated output impedance is best fit at the

gate bias near the threshold voltage. A novel gate-to-drain

feedback capacitance network is used to model the gate

charge

characteristics

while

avoiding

convergence

values are optimized to provide a best fit to the measured

electrical data and are not intended as an exact physical

interpretation of the device.

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

•Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the - 55 °C to + 125 °C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse

Recovery Characteristics

SUBCIRCUIT MODEL SCHEMATIC

Note

This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to

the appropriate datasheet of the same number for guaranteed specification limits.

D

S

DBD

G

3

Gx

Gy

ETCV

+ –