SI4812BDY-T1-E3 datasheet(2/9 Pages) VISHAY

номер детали	SI4812BDY-T1-E3

подробное описание детали	N-Channel 30-V (D-S) MOSFET with Schottky Diode

Download	9 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

Logo

2 / 9 page

www.vishay.com

2

Document Number: 73038

S-83039-Rev. D, 29-Dec-08

Vishay Siliconix

Si4812BDY

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

13

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

(MOSFET and Schottky)

IDSS

VDS = 30 V, VGS = 0 V

0.004

0.100

mA

VDS = 30 V, VGS = 0 V, TJ = 100 °C

0.7

10

VDS = 30 V, VGS = 0 V, TJ = 125 °C

3.0

20

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 9.5 A

0.013

0.016

Ω

VGS = 4.5 V, ID = 7.7 A

0.0165

0.021

Forward Transconductancea

gfs

VDS = 15 V, ID = 9.5 A

45

S

Schottky Diode Forward Voltagea

VSD

IS = 1.0 A, VGS = 0 V

0.45

0.50

V

IS = 1.0 A, VGS = 0 V, TJ = 125 °C

0.33

0.42

Dynamicb

Total Gate Charge

Qg

VDS = 15 V, VGS = 5 V, ID = 9.5 A

8.5

13

nC

Gate-Source Charge

Qgs

3

Gate-Drain Charge

Qgd

2.6

Gate Resistance

Rg

0.3

0.7

1.1

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

15

25

ns

Rise Time

tr

13

20

Turn-Off Delay Time

td(off)

20

30

Fall Time

tf

815

Source-Drain Reverse Recovery Time

trr

IF = 1.0 A, dI/dt = 100 A/µs

22

35

Аналогичный номер детали - SI4812BDY-T1-E3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4812BDY-E3	254Kb / 9P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 29-Dec-08

More results

Аналогичное описание - SI4812BDY-T1-E3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7160DP	109Kb / 7P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 16-Feb-09
	SI4646DY	210Kb / 9P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 18-May-09
	SIE726DF	210Kb / 10P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 13-Jul-09
Unisonic Technologies	UT4810D	201Kb / 5P	N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
Vishay Siliconix	SI4810DY	43Kb / 5P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. F, 26-May-03
	SI7720DN	552Kb / 14P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 04-Aug-08
	SI4812BDY-E3	254Kb / 9P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 29-Dec-08
Vishay Telefunken	SIS782DN	560Kb / 14P	N-Channel 30 V (D-S) MOSFET with Schottky Diode
Vishay Telefunken	SI7748DP	385Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode
Vishay Siliconix	SIS782DN	594Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode 01-Jan-2022
Vishay Siliconix	SIS780DN	592Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode 01-Jan-2022

More results

SI4812BDY-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix

SI4812BDY-T1-E3 датащи(HTML) 2 Page - Vishay Siliconix

Аналогичный номер детали - SI4812BDY-T1-E3

Аналогичное описание - SI4812BDY-T1-E3

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL