SI4936CDY-T1-GE3 datasheet(1/10 Pages) VISHAY

номер детали	SI4936CDY-T1-GE3

подробное описание детали	Dual N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si4936CDY

New Product

Document Number: 69097

S09-0390-Rev. C, 09-Mar-09

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

APPLICATIONS

•

Low Current DC/DC Conversion

•

Notebook System Power

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

30

0.040 at VGS = 10 V

5.8

2.8 nC

0.050 at VGS = 4.5 V

5.5

D1

G1

D1

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S1

S2

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 110 °C/W.

d. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

5.8

A

TC = 70 °C

4.6

TA = 25 °C

5.0a, b

TA = 70 °C

4.0a, b

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.9

TA = 25 °C

1.4a, b

Maximum Power Dissipation

TC = 25 °C

PD

2.3

W

TC = 70 °C

1.5

TA = 25 °C

1.7a, b

TA = 70 °C

1.1a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

58

75

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

42

55

Аналогичный номер детали - SI4936CDY-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4936CDY-T1-GE3	197Kb / 9P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SI4936CDY-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
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	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

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SI4936CDY-T1-GE3 датащи(PDF) 1 Page - Vishay Siliconix

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Аналогичный номер детали - SI4936CDY-T1-GE3

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