поискавой системы для электроныых деталей |
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SI4946BEY-T1-GE3 датащи(PDF) 4 Page - Vishay Siliconix |
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SI4946BEY-T1-GE3 датащи(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 Vishay Siliconix Si4946BEY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.4 1 10 30 0 0.2 0.4 0.6 0.8 TJ = 175 °C VSD - Source-to-Drain Voltage (V) 1.2 TJ = 25 °C 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 02468 10 ID = 5.3 A VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 150 °C 0 15 25 5 10 Time (s) 20 10 1000 1 0.1 0.01 100 Safe Operating Area, Junction-to-Ambient 100 1 0.01 1 10 100 0.01 10 0.1 0.1 1 ms 10 ms 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TA = 25 °C Single Pulse 100 µs DC 10 s 1 s |
Аналогичный номер детали - SI4946BEY-T1-GE3 |
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Аналогичное описание - SI4946BEY-T1-GE3 |
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