SI5904DC datasheet(2/9 Pages) VISHAY

номер детали	SI5904DC

подробное описание детали	Dual N-Channel 2.5 V (G-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

Logo

2 / 9 page

www.vishay.com

2

Document Number: 71065

S10-0548-Rev. D, 08-Mar-10

Vishay Siliconix

Si5904DC

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 85 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

10

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 3.1 A

0.065

0.075

Ω

VGS = 2.5 V, ID = 2.3 A

0.115

0.143

Forward Transconductancea

gfs

VDS = 10 V, ID = 3.1 A

8S

Diode Forward Voltagea

VSD

IS = 0.9 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 3.1 A

46

nC

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

1.3

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω

12

18

ns

Rise Time

tr

35

55

Turn-Off Delay Time

td(off)

19

30

Fall Time

tf

915

Source-Drain Reverse Recovery Time

trr

IF = 0.9 A, dI/dt = 100 A/µs

40

80

Output Characteristics

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 V thru 3 V

2 V

VDS - Drain-to-Source Voltage (V)

1.5 V

2.5 V

Transfer Characteristics

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TC = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Аналогичный номер детали - SI5904DC

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI5904DC	112Kb / 4P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. B, 05-Aug-02
	SI5904DC	94Kb / 5P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. C, 18-Apr-05
	SI5904DC	111Kb / 5P	Dual N-Channel 2.5 V (G-S) MOSFET 01-Jan-2022
	SI5904DC-T1	112Kb / 4P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. B, 05-Aug-02
	SI5904DC-T1	94Kb / 5P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. C, 18-Apr-05

More results

Аналогичное описание - SI5904DC

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	72413	182Kb / 3P	Dual N-Channel 2.5-V (G-S) MOSFET 01-Jun-04
Vishay Siliconix	SI6925ADQ	175Kb / 3P	Dual N-Channel 2.5-V (G-S) MOSFET 23-May-04
Guangdong Kexin Industr...	KI5904DC	66Kb / 2P	Dual N-Channel 2.5-V (G-S) MOSFET
Vishay Siliconix	SI6946DQ	50Kb / 4P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. E, 06-Oct-97
Vishay Telefunken	SI6926ADQ	227Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET
Vishay Telefunken	SI6968BE	229Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET
Vishay Siliconix	SI5904DC	94Kb / 5P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. C, 18-Apr-05
	SI9925DY	41Kb / 4P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. N, 26-May-03
	SI6926ADQ	100Kb / 6P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. A, 16-Feb-04
	SI6926ADQ	222Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. B, 12-May-08

More results

SI5904DC датащи(PDF) 2 Page - Vishay Siliconix

SI5904DC датащи(HTML) 2 Page - Vishay Siliconix

Аналогичный номер детали - SI5904DC

Аналогичное описание - SI5904DC

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL