поискавой системы для электроныых деталей |
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SI6466ADQ датащи(PDF) 3 Page - Vishay Siliconix |
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SI6466ADQ датащи(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 71182 S-80682-Rev. C, 31-Mar-08 www.vishay.com 3 Vishay Siliconix Si6466ADQ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0 6 12 18 24 30 ID - Drain Current (A) VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 04 8 12 16 20 VDS = 10 V ID = 8.1 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 30 10 1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) Crss 0 600 1200 1800 2400 3000 04 8 12 16 20 Coss Ciss 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 V GS = 10 V I D = 8.1 A T J - Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 ID = 8.1 A VGS - Gate-to-Source Voltage (V) |
Аналогичный номер детали - SI6466ADQ |
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Аналогичное описание - SI6466ADQ |
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