поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

SI7634BDP датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI7634BDP
подробное описание детали  N-Channel 30-V (D-S) MOSFET
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7634BDP датащи(HTML) 2 Page - Vishay Siliconix

  SI7634BDP Datasheet HTML 1Page - Vishay Siliconix SI7634BDP Datasheet HTML 2Page - Vishay Siliconix SI7634BDP Datasheet HTML 3Page - Vishay Siliconix SI7634BDP Datasheet HTML 4Page - Vishay Siliconix SI7634BDP Datasheet HTML 5Page - Vishay Siliconix SI7634BDP Datasheet HTML 6Page - Vishay Siliconix SI7634BDP Datasheet HTML 7Page - Vishay Siliconix SI7634BDP Datasheet HTML 8Page - Vishay Siliconix SI7634BDP Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 13 page
background image
www.vishay.com
2
Document Number: 74031
S-80439-Rev. C, 03-Mar-08
Vishay Siliconix
Si7634BDP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
33
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 6.4
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.4
2.6
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0045
0.0054
Ω
VGS = 4.5 V, ID = 10 A
0.0058
0.007
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
78
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
3150
pF
Output Capacitance
Coss
420
Reverse Transfer Capacitance
Crss
166
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
45.5
68
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
21.5
33
Gate-Source Charge
Qgs
8
Gate-Drain Charge
Qgd
6.2
Gate Resistance
Rg
f = 1 MHz
0.8
1.6
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
12
24
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
34
55
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
30
50
Rise Time
tr
12
24
Turn-Off Delay Time
td(off)
34
55
Fall Time
tf
12
24
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
40
A
Pulse Diode Forward Currenta
ISM
70
Body Diode Voltage
VSD
IS = 3 A
0.75
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
35
70
nC
Reverse Recovery Fall Time
ta
20
ns
Reverse Recovery Rise Time
tb
10


Аналогичный номер детали - SI7634BDP

производительномер деталидатащиподробное описание детали
logo
Vishay Siliconix
SI7634BDP VISHAY-SI7634BDP Datasheet
360Kb / 13P
   N-Channel 30 V (D-S) MOSFET
01-Jan-2022
SI7634BDP-T1-E3 VISHAY-SI7634BDP-T1-E3 Datasheet
360Kb / 13P
   N-Channel 30 V (D-S) MOSFET
01-Jan-2022
SI7634BDP-T1-GE3 VISHAY-SI7634BDP-T1-GE3 Datasheet
360Kb / 13P
   N-Channel 30 V (D-S) MOSFET
01-Jan-2022
SI7634BDP VISHAY-SI7634BDP_V01 Datasheet
360Kb / 13P
   N-Channel 30 V (D-S) MOSFET
01-Jan-2022
More results

Аналогичное описание - SI7634BDP

производительномер деталидатащиподробное описание детали
logo
Vishay Siliconix
SI3456DV VISHAY-SI3456DV Datasheet
61Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. B, 23-Nov-98
SUU50N03-12P VISHAY-SUU50N03-12P Datasheet
60Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. A, 15-Sep-03
SI4894DY VISHAY-SI4894DY Datasheet
129Kb / 3P
   N-Channel 30-V (D-S) MOSFET
17-May-04
SI4406DY VISHAY-SI4406DY Datasheet
38Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. C, 26-May-03
SI7380DP VISHAY-SI7380DP Datasheet
180Kb / 3P
   N-Channel 30-V (D-S) MOSFET
24-May-04
SI733ADP VISHAY-SI733ADP Datasheet
61Kb / 5P
   N-Channel 30-V (D-S) MOSFET
Rev. A, 25-Oct-04
SI4892DY VISHAY-SI4892DY Datasheet
71Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. F, 01-Aug-05
logo
Vaishali Semiconductor
SI4356ADY VAISH-SI4356ADY Datasheet
143Kb / 3P
   N-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SIRA00DP VISHAY-SIRA00DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 13-Feb-12
SIRA04DP VISHAY-SIRA04DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 13-Feb-12
SIRA14DP VISHAY-SIRA14DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 12-Mar-12
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com