поискавой системы для электроныых деталей |
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SI7774DP датащи(PDF) 1 Page - Vishay Siliconix |
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SI7774DP датащи(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7774DP New Product Document Number: 70630 S10-1534-Rev. A, 19-Jul-10 www.vishay.com 1 N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • VRM, POL, Server • Notebook - Low-Side PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) 30 0.0038 at VGS = 10 V 60 21.5 nC 0.0047 at VGS = 4.5 V 60 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View N-Channel MOSFET G S D Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 60a A TC = 70 °C 60a TA = 25 °C 27b, c TA = 70 °C 21b, c Pulsed Drain Current IDM 80 Continuous Source-Drain Diode Current TC = 25 °C IS 60a TA = 25 °C 8b, c Single Pulse Avalanche Current L = 0.1 mH IAS 40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD 48 W TC = 70 °C 31 TA = 25 °C 5.0b, c TA = 70 °C 3.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 10 s RthJA 20 25 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.1 2.6 |
Аналогичный номер детали - SI7774DP |
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Аналогичное описание - SI7774DP |
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