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SI7946DP датащи(PDF) 2 Page - Vishay Siliconix |
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SI7946DP датащи(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7946DP SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.6 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 39 A VGS = 10 V, ID = 3.3 A 0.123 0.124 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 3.1 A 0.133 0.137 Ω Forward Transconductance a gfs VDS = 15 V, ID = 3.3 A 6 9 S Forward Voltage a VSD IS = 2.9 A, VGS = 0 V 0.83 0.87 V Dynamic b Total Gate Charge Qg 12 12.6 Gate-Source Charge Qgs 2.8 2.8 Gate-Drain Charge Qgd VDS = 75 V, VGS = 10 V, ID = 3.3 A 4.5 4.5 nC Turn-On Delay Time td(on) 13 11 Rise Time tr 13 15 Turn-Off Delay Time td(off) 32 30 Fall Time tf VDD = 75 V, RL = 75 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 14 20 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72375 S-60261 Rev. B, 27-Feb-06 |
Аналогичный номер детали - SI7946DP_06 |
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Аналогичное описание - SI7946DP_06 |
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