SI7994DP-T1-GE3 datasheet(1/13 Pages) VISHAY

номер детали	SI7994DP-T1-GE3

подробное описание детали	Dual N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si7994DP

New Product

Document Number: 69974

S-80895-Rev. B, 21-Apr-08

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

• TrenchFET® Power MOSFET

APPLICATIONS

•

System Power DC/DC

•

Notebook

•

Server

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0056 at VGS = 10 V

60

24 nC

0.007 at VGS = 4.5 V

60

Ordering Information: Si7994DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK SO-8

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

60a

A

TC = 85 °C

60a

TA = 25 °C

20b, c

TA = 85 °C

16b, c

Pulsed Drain Current

IDM

60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

38

TA = 25 °C

2.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

46

W

TC = 85 °C

29

TA = 25 °C

3.5b, c

TA = 85 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

26

35

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.2

2.7

RoHS

COMPLIANT

Аналогичный номер детали - SI7994DP-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Telefunken	SI7994DP	346Kb / 13P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7994DP	347Kb / 13P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7994DP	347Kb / 13P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022

More results

Аналогичное описание - SI7994DP-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

More results

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Аналогичный номер детали - SI7994DP-T1-GE3

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