SI7997DP datasheet(1/13 Pages) VISHAY

номер детали	SI7997DP

подробное описание детали	Dual P-Channel 30 V (D-S) MOSFET

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Vishay Siliconix

Si7997DP

New Product

Document Number: 66719

S10-1826-Rev. A, 09-Aug-10

www.vishay.com

1

Dual P-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

PWM Optimized

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Battery and Load Switching

for Notebook PCs

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

- 30

0.0055 at VGS = - 10 V

- 60

51 nC

0.0078 at VGS = - 4.5 V

- 60

Ordering Information: Si7997DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK® SO-8

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 60a

A

TC = 70 °C

- 60a

TA = 25 °C

- 20.8b, c

TA = 70 °C

- 16.6b, c

Pulsed Drain Current

IDM

- 100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 38

TA = 25 °C

- 2.9b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 30

Single Pulse Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

46

W

TC = 70 °C

29

TA = 25 °C

3.5b, c

TA = 70 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

26

35

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.2

2.7

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

Аналогичный номер детали - SI7997DP

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7997DP	373Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI7997DP-T1-GE3	373Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI7997DP	309Kb / 14P	Dual P-Channel 30 V (D-S) MOSFET Rev. A, 09-Aug-10
	SI7997DP	373Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET 01-Jan-2022

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Аналогичное описание - SI7997DP

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4953DY	43Kb / 4P	Dual P-Channel 30-V(D-S) MOSFET Rev. E, 18-Aug-03
	SIA931DJ	277Kb / 9P	Dual P-Channel 30-V (D-S) MOSFET Rev. A, 13-May-13
	SI3993DV	204Kb / 10P	Dual P-Channel 30-V (D-S) MOSFET Rev. C, 02-Nov-09
Anachip Corp	AF4935	149Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4927DY	271Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 02-Jan-06
	SI7941DP	274Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET 31-May-04
	SI7921DN	186Kb / 5P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Jun-05
Guangdong Kexin Industr...	KI4923DY	51Kb / 2P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
Guangdong Kexin Industr...	KI4953DY	50Kb / 2P	Dual P-Channel 30-V(D-S) MOSFET

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