SI8497DB datasheet(1/9 Pages) VISHAY

номер детали	SI8497DB

подробное описание детали	P-Channel 30 V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

Logo

1 / 9 page

Vishay Siliconix

Si8497DB

Document Number: 63355

S11-1385-Rev. A, 11-Jul-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Ultra-small 1.5 mm x 1 mm Maximum Outline

•

Ultra-thin 0.59 Maximum Height

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Low On-Resistance Load Switch, Charger Switch,

OVP Switch and Battery Switch for Portable

Devices

- Low Power Consumption

- Increased Battery Life

- Space Savings on PCB

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.

d. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

d

Qg (Typ.)

- 30

0.053 at VGS = - 4.5 V

- 13

16.3 nC

0.071 at VGS = - 2.5 V

- 11

0.120 at VGS = - 2.0 V

- 5

MICRO FOOT

Device Marking: 8497

xxx = Date/Lot Traceability Code

Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free)

DD

SS

SG

1

2

6

3

5

4

Bump Side View

Backside View

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 13

A

TC = 70 °C

- 10

TA = 25 °C

- 5.9a, b

TA = 70 °C

- 4.7a, b

Pulsed Drain Current (t = 300 µs)

IDM

- 20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 11

TA = 25 °C

- 2.3a, b

Maximum Power Dissipation

TC = 25 °C

PD

13

W

TC = 70 °C

8.4

TA = 25 °C

2.77a, b

TA = 70 °C

1.77a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Package Reflow Conditionsc

IR/Convection

260

Аналогичный номер детали - SI8497DB

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI8497DB	176Kb / 8P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

Аналогичное описание - SI8497DB

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

More results

SI8497DB датащи(PDF) 1 Page - Vishay Siliconix

SI8497DB датащи(HTML) 1 Page - Vishay Siliconix

Аналогичный номер детали - SI8497DB

Аналогичное описание - SI8497DB

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL