поискавой системы для электроныых деталей |
|
SI9166DB датащи(PDF) 8 Page - Vishay Siliconix |
|
SI9166DB датащи(HTML) 8 Page - Vishay Siliconix |
8 / 11 page Si9166 Vishay Siliconix www.vishay.com 8 Document Number: 70847 S-40701—Rev. C, 19-Apr-04 Oscillator The oscillator is designed to operate up to 2-MHz minimal. The 2-MHz operating frequency allows the converter to minimize the inductor and capacitor size, improving the power density of the converter. Even with 2-MHz switching frequency, quiescent current is only 500 mA with unique power saving circuit design. The switching frequency is easily programmed by attaching resistor to ROSC pin. See oscillator frequency versus ROSC curve to select the proper timing values for desired operating frequency. The tolerance on the operating frequency is (20% with 1% tolerance resistor). Synchronization The synchronization to external clock is easily accomplished by connecting the external clock into the SYNC pin. The logic high-to-low transition synchronizes the clock. The external clock frequency must be within 1.2 to 1.5 times the internal clock frequency. Break-Before-Make Timing A proper BBM time is essential in order to prevent shoot-through current and to maintain high efficiency. The break-before-make time is set internally at 20 to 60 ns @ VS = 3.6 V. The high- and low-side gate drive voltages are monitored and when the gate to source voltage reaches 1.75 V above or below the initial starting voltage, 20 to 60 ns BBM time is set before the other gate drive transitions to its proper state. The maximum and minimum duty cycle is limited by the BBM time. Since the BBM time is fixed, controllable maximum duty cycle will vary depending on the switching frequency. Output Driver Stage The DH pin is designed to drive the high-side p-channel MOSFET, independent of topology. The DL pin is designed to drive the low-side n-channel MOSFET, independent of topology. The driver stage is sized to sink and source peak currents up to 450 mA with VS = 3.3 V. The ringing from the gate drive output trace inductance can produce negative voltage on the DH and DL respect to PGND. The gate drive circuit is capable of withstanding these negative voltages without any functional defects. |
Аналогичный номер детали - SI9166DB |
|
Аналогичное описание - SI9166DB |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |