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SIA426DJ-T1-GE3 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SIA426DJ-T1-GE3
подробное описание детали  N-Channel 20-V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
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SIA426DJ-T1-GE3 датащи(HTML) 2 Page - Vishay Siliconix

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Document Number: 68630
S-81002-Rev. A, 05-May-08
Vishay Siliconix
SiA426DJ
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package Limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
25
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 3.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 9.9 A
0.0196
0.0236
Ω
VGS = 4.5 V, ID = 9.4 A
0.0219
0.0263
VGS = 2.5 V, ID = 8 A
0.0301
0.0361
Forward Transconductancea
gfs
VDS = 10 V, ID = 9.9 A
20
S
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1020
pF
Output Capacitance
Coss
160
Reverse Transfer Capacitance
Crss
70
Total Gate Charge
Qg
VDS = 10 V, VGS = 10 V, ID = 9.9 A
17.5
27
nC
VDS = 10 V, VGS = 4.5 V, ID = 9.9 A
7.9
16
Gate-Source Charge
Qgs
2.1
Gate-Drain Charge
Qgd
1.1
Gate Resistance
Rg
f = 1 MHz
0.6
3
6
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 1.3 Ω
ID ≅ 7.9 A, VGEN = 4.5 V, Rg = 1 Ω
12
18
ns
Rise Time
tr
11
17
Turn-Off Delay Time
td(off)
27
41
Fall Time
tf
11
17
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 1.3 Ω
ID ≅ 7.9 A, VGEN = 10 V, Rg = 1 Ω
714
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
4.5c
A
Pulse Diode Forward Current
ISM
20
Body Diode Voltage
VSD
IS = 7.9 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C
16
24
ns
Body Diode Reverse Recovery Charge
Qrr
612
nC
Reverse Recovery Fall Time
ta
7
ns
Reverse Recovery Rise Time
tb
8


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