поискавой системы для электроныых деталей |
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SIA444DJT датащи(PDF) 4 Page - Vishay Siliconix |
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SIA444DJT датащи(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 67056 S11-1655-Rev. C, 15-Aug-11 Vishay Siliconix SiA444DJT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.01 0.02 0.03 0.04 0.05 02468 10 V GS - Gate-to-Source Voltage (V) T J = 150 °C T J = 25 °C I D = 7.4 A Time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s,10s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
Аналогичный номер детали - SIA444DJT |
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Аналогичное описание - SIA444DJT |
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