Document Number: 65706

S10-0214-Rev. A, 25-Jan-10

www.vishay.com

9

Vishay Siliconix

SiA533EDJ

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

0

2

4

6

8

0

3

6

9

12

15

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

1.2

T

0.45

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

- 50

- 25

25

75

125

0

50

100

150

1.1

1.3

1.2

0.7

0.9

1.0

0.8

1.4

1.5

T

V

V

I

0.00

0.0

1.0

2.0

4.0

5.0

3.0

0.16

0.12

0.08

0.04

0.20

I

I

I

I

1000

100

1

0.001

0.01

0.1

10

Pulse (s)

20

10

5

15

0