IN-

VBAT

IN+

PVDD

AGND

OUT-

OUT+

GAIN

Oscillator

Boost

Converter

Battery

Monitor

+

–

PWM

H-

Bridge

GND

PVDD

PVOUT

GND

Bias &

Control

END

ENB

SW

Gain

Select:

+20 dB

+15.5 dB

+6 dB

AGC

AGC

PVDD

OUT+

OUT-

GND

GND

GND

VBAT

ENB

SW

AGC

END

IN-

PVOUT

GND

IN+

GAIN

D4

C4

B4

A4

D3

C3

B3

A3

D2

B2

A2

C2

D1

C1

B1

A1

WCSP (YZH)PACKAGE

(TOP VIEW)

SymbolSide

TPA2015D1

SLOS638A

– NOVEMBER 2011 – REVISED NOVEMBER 2011

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

FUNCTIONAL BLOCK DIAGRAM

DEVICE PINOUT

2

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Copyright

© 2011, Texas Instruments Incorporated

Product Folder Link(s): TPA2015D1