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Document Number: 81020

4

Rev. 1.8, 08-Oct-09

TSHA5500

Vishay Semiconductors

Infrared Emitting Diode, 875 nm,

GaAlAs

Fig. 9 - Relative Radiant Power vs. Wavelength

Fig. 10 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

780

880

λ - Wavelenght (nm)

980

94 8000

0

0.25

0.5

0.75

1.0

1.25

p

e

Φ

e

e

)/

λ

()

λ

(

λ

Φ

0.4

0.2

0

0.2

0.4

0.6

94 8016 e

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

14435

1.1 ± 0.25

0.5

+ 0.15

- 0.05

Ø 5 ± 0.15

2.54 nom.

0.5

+ 0.15

- 0.05

Area not plane

6.544-5258.08-4

A

C

R 2.49 (sphere)

specifications

according to DIN

technical drawings

Issue: 4; 19.05.09