поискавой системы для электроныых деталей |
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BCP71M датащи(PDF) 1 Page - Siemens Semiconductor Group |
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BCP71M датащи(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page BCP 71M Semiconductor Group Au -12-1998 1 NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage VPW05980 1 2 3 5 4 Type Marking Ordering Code Pin Configuration Package BCP 71M PCs Q62702-C2597 1 = E 2 = C 3 = E SCT-595 4 = B 5 = C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 32 V Collector-base voltage VCBO 32 Emitter-base voltage VEBO 5 DC collector current IC 3 A Peak collector current ICM 6 Base current 200 mA IB Peak base current IBM 500 Total power dissipation, TS ≤ 94 °C Ptot 1.7 W Junction temperature Tj 150 °C Storage temperature Tstg -65...+150 Thermal Resistance Junction ambient 1) RthJA ≤ 88 K/W Junction - soldering point RthJS ≤ 33 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 1998-11-01 |
Аналогичный номер детали - BCP71M |
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Аналогичное описание - BCP71M |
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