BF1012W datasheet(3/3 Pages) SIEMENS | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

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BF1012W датащи(PDF) 3 Page - Siemens Semiconductor Group

номер детали	BF1012W

подробное описание детали	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

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производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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Аналогичный номер детали - BF1012W

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BF1012	33Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
Siemens Semiconductor G...	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Аналогичное описание - BF1012W

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BF2030	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040W	31Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2030W	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF998	180Kb / 8P	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
	BF2000W	19Kb / 3P	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
	BF1009S	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
	BF1005S	52Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012	33Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

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