2SD2098 datasheet(1/3 Pages) HTSEMI

номер детали	2SD2098

подробное описание детали	Excellent DC current gain characteristics Complements the 2SB1386

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FEATURES

Excellent DC current gain characteristics

Complements the 2SB1386

MAXIMUM RATINGS (

TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

5

A

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=50μA,IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA, =0

6

V

Collector cut-off current

ICBO

VCB=40V,IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.5

μA

DC current gain

hFE

VCE=2V,IC=0.5A

120

390

Collector-emitter saturation voltage

VCE(sat)

IC=4A,IB=100mA

1

V

Transition frequency

fT

VCE=6V,IC=50mA,f=100MHz

150

MHz

Collector output capacitance

Cob

VCB=20V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF

hFE

Rank

Q

R

Range

120-270

180-390

Marking

AHQ

AHR

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

１　

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2SD2098

Аналогичный номер детали - 2SD2098

производитель	номер детали	датащи	подробное описание детали
Rohm	2SD2098	159Kb / 4P	Low VCE(sat) Transistor(Strobe flash)
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Аналогичное описание - 2SD2098

производитель	номер детали	датащи	подробное описание детали
First Silicon Co., Ltd	FTB1386	250Kb / 3P	Excellent DC current gain characteristics
SHIKUES Electronics	2SD2098	3Mb / 4P	Excellent DC current gain characteristics
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2SD2098 датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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Аналогичный номер детали - 2SD2098

Аналогичное описание - 2SD2098

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