BC847S datasheet(1/2 Pages) HTSEMI

номер детали	BC847S

подробное описание детали	Multi-chip transistor (NPN)

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BC847S

Multi-chip transistor (NPN)

APPLICATION

This device is designed for general purpose amplifier applications

Marking :1C

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

50

VCEO

Collector-Emitter Voltage

45

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

200

mA

PD

Power Dissipation

200

mW

RθJA

Thermal Resistance. Junction to Ambient

625

℃/W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10µA,IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA,IC=0

6

V

Collector cut-off current

ICBO

VCB=30V,IE=0

15

Emitter cut-off current

IEBO

VEB =4V , IC=0

15

nA

DC current gain*

hFE

VCE=5V,IC=2mA

110

630

VCE(sat)(1)

IC=10mA,IB=0.5mA

0.25

V

Collector-emitter saturation voltage

VCE(sat)(2)

IC=100mA,IB=5mA

0.65

V

VBE(1)

VCE=5V,IC=2mA

0.58

0.7

V

Base-emitter voltage

VBE(2)

VCE=5V,IC=10mA

0.77

V

Transition frequency

fT

VCE=5V,IC=20mA ,f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

2

pF

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

SOT-363

E1

B1

C2

C1

B2

E2

www.htsemi.com

semiconductor

JinYu

1

Date:2011/ 05

Аналогичный номер детали - BC847S

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BC847S	156Kb / 6P	NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
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Infineon Technologies A...	BC847S	57Kb / 6P	NPN Silicon AF Transistor Array Nov-29-2001
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Аналогичное описание - BC847S

производитель	номер детали	датащи	подробное описание детали
SHENZHEN YONGERJIA INDU...	MMDT5551	171Kb / 1P	Multi-Chip TRANSISTOR (NPN)
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Fairchild Semiconductor	FMBA14	48Kb / 3P	NPN Multi-Chip Darlington Transistor
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New Jersey Semi-Conduct...	2N2901	73Kb / 1P	NPN MULTI-CHIP COMPOSITE TRANSISTOR PAIR
SeCoS Halbleitertechnol...	BC847PN	699Kb / 3P	NPN - PNP Silicon Multi-Chip Transistor
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Аналогичный номер детали - BC847S

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