KTD1302 datasheet(1/1 Pages) HTSEMI

номер детали	KTD1302

подробное описание детали	TRANSISTOR (NPN)

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

FEATURES

Small Flat Package

Audio Muting Application

High Emitter-Base Voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=0.1mA,IE=0

25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

12

V

Collector cut-off current

ICBO

VCB=25V,IE=0

100

nA

Emitter cut-off current

IEBO

VEB=12V,IC=0

100

nA

hFE(1) (FOR)

VCE=2V, IC=4mA

200

800

DC current gain

hFE(2)(REV)

VCE=2V, IC=4mA

20

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA,IB=10mA

1

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

10

pF

Transition frequency

fT

VCE=10V,IC=1mA,

f=100MHz

60

MHz

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current

300

mA

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

KTD1302

TRANSISTOR (NPN)

１　

Ｄａｔｅ：２０１１／０５

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