SOT-23(PACKAGE)

VDS= 20V

RDS(ON), Vgs@ 4.5V, Ids@

Ω

RDS(ON), Vgs@ 2.5V, Ids@ 2.0A

Package Dimensions

S

G

D

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

Ω

80m

Notes

Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t v 5 sec.

1)

3.0A

2)

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90

REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0°

10°

Millimeter

70m

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

High Power and Current handing capability

Ideal for Li ion battery pack applications

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

20

Gate-Source Voltage

± 12

V

Continuous Drain Current

2.3

Pulsed Drain Current

1)

8

A

TA = 25

1.25

Maximum Power Dissipation

TA = 75

0.8

W

Operating Junction and Storage Temperature Range

-55 to 150

Junction-to-Ambient Thermal Resistance (PCB mounted)

2)

78

１

Ｄａｔｅ：２０１１／０５

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20V N-Channel Enhancement Mode MOSFET

SI2300