поискавой системы для электроныых деталей |
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SI2300 датащи(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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SI2300 датащи(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
1 / 4 page SOT-23(PACKAGE) VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ Ω RDS(ON), Vgs@ 2.5V, Ids@ 2.0A Package Dimensions S G D Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Ω 80m Notes Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t v 5 sec. 1) 3.0A 2) Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Millimeter 70m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 V Continuous Drain Current ID 2.3 Pulsed Drain Current 1) IDM 8 A TA = 25 oC 1.25 Maximum Power Dissipation TA = 75 oC PD 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC Junction-to-Ambient Thermal Resistance (PCB mounted) 2) RθJA 78 oC/W 1 Date:2011/05 www.htsemi.com semiconductor JinYu 20V N-Channel Enhancement Mode MOSFET SI2300 |
Аналогичный номер детали - SI2300 |
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Аналогичное описание - SI2300 |
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